A2SHB mosfet equivalent, n-channel mosfet.
* 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
* 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* SOT23 Package.
notebook computer power management and other battery powered circuits where high-side switching are needed.
Ordering In.
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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